NCEP031N85M MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP031N85M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 117 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 1350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-220
NCEP031N85M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP031N85M Datasheet (PDF)
ncep031n85m.pdf
Pb Free ProductNCEP031N85MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =180ADS Dswitching performance. Both conduction and switching powerR =2.9m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to a
ncep036n10msl.pdf
NCEP036N10MSLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =215ADS Dswitching performance. Both conduction and switching power R =3.0m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep035n60ag.pdf
Pb Free Producthttp://www.ncepower.com NCEP035N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP035N60AG uses Super Trench II technology that is V =60V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =3.5m (typical) @
ncep035n10m.pdf
NCEP035N10M, NCEP035N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO
ncep030n60agu.pdf
Pb Free Producthttp://www.ncepower.com NCEP030N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP030N60AGU uses Super Trench II technology that V =60V,I =95ADS Dis uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5VDS(ON
ncep039n10f.pdf
NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati
ncep030n85gu.pdf
http://www.ncepower.com NCEP030N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP030N85GU uses Super Trench II technology that is V =85V,I =140ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R pro
ncep035n85 ncep035n85d.pdf
NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
ncep035n60k.pdf
http://www.ncepower.com NCEP035N60KNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP035N60K uses Super Trench II technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep035n60ak.pdf
http://www.ncepower.com NCEP035N60AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP035N60AK uses Super Trench II technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5VDS(ON)
ncep030n12 ncep030n12d.pdf
NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
ncep039n10m ncep039n10md.pdf
NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (
ncep035n72gu.pdf
NCEP035N72GUNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =72V,I =120ADS Dswitching performance. Both conduction and switching powerR =2.4m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep035n12vd.pdf
NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep033n10m.pdf
NCEP033N10M, NCEP033N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO
ncep033n85m.pdf
NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep033n10 ncep033n10d.pdf
NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
ncep035n72.pdf
NCEP035N72NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat
ncep038n10gu.pdf
http://www.ncepower.com NCEP038N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP038N10GU uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.45m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produ
ncep030n85ll.pdf
NCEP030N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =210ADS Dswitching performance. Both conduction and switching power R =2.65m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep030n30gu.pdf
http://www.ncepower.com NCEP030N30GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4m (typical) @ V =4.5V
ncep033n85 ncep033n85d.pdf
NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep039n10 ncep039n10d.pdf
NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO
ncep035n85gu.pdf
http://www.ncepower.com NCEP035N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
