NCEP031N85M datasheet, подбор замены

 ..1. Size:997K  ncepower
 ncep031n85m.pdf 

Pb Free Product NCEP031N85M NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =180A DS D switching performance. Both conduction and switching power R =2.9m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to a

 8.1. Size:1515K  ncepower
 ncep039n10m.pdf 

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t

 8.2. Size:1810K  ncepower
 ncep039n10d.pdf 

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V

 8.3. Size:679K  ncepower
 ncep036n10msl.pdf 

NCEP036N10MSL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =215A DS D switching performance. Both conduction and switching power R =3.0m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 8.4. Size:1386K  ncepower
 ncep035n60ag.pdf 

Pb Free Product http //www.ncepower.com NCEP035N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AG uses Super Trench II technology that is V =60V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @

 8.5. Size:397K  ncepower
 ncep035n10m.pdf 

NCEP035N10M, NCEP035N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO

 8.6. Size:931K  ncepower
 ncep030n60agu.pdf 

Pb Free Product http //www.ncepower.com NCEP030N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N60AGU uses Super Trench II technology that V =60V,I =95A DS D is uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5V DS(ON

 8.7. Size:314K  ncepower
 ncep039n10f.pdf 

NCEP039N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 8.8. Size:1095K  ncepower
 ncep033n85d.pdf 

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 8.9. Size:500K  ncepower
 ncep030n12.pdf 

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 8.10. Size:758K  ncepower
 ncep030n85gu.pdf 

http //www.ncepower.com NCEP030N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N85GU uses Super Trench II technology that is V =85V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R pro

 8.11. Size:414K  ncepower
 ncep035n85 ncep035n85d.pdf 

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 8.12. Size:402K  ncepower
 ncep033n10.pdf 

NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 8.13. Size:1515K  ncepower
 ncep039n10md.pdf 

Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t

 8.14. Size:729K  ncepower
 ncep035n60k.pdf 

http //www.ncepower.com NCEP035N60K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60K uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

 8.15. Size:717K  ncepower
 ncep035n60ak.pdf 

http //www.ncepower.com NCEP035N60AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AK uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5V DS(ON)

 8.16. Size:414K  ncepower
 ncep035n85d.pdf 

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 8.17. Size:500K  ncepower
 ncep030n12 ncep030n12d.pdf 

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 8.18. Size:1095K  ncepower
 ncep033n85.pdf 

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 8.19. Size:414K  ncepower
 ncep035n85.pdf 

NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m

 8.20. Size:500K  ncepower
 ncep030n12d.pdf 

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 8.21. Size:338K  ncepower
 ncep039n10m ncep039n10md.pdf 

NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (

 8.22. Size:346K  ncepower
 ncep035n12.pdf 

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.23. Size:777K  ncepower
 ncep035n72gu.pdf 

NCEP035N72GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =72V,I =120A DS D switching performance. Both conduction and switching power R =2.4m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 8.24. Size:309K  ncepower
 ncep035n12vd.pdf 

NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin

 8.25. Size:346K  ncepower
 ncep035n12d.pdf 

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.26. Size:346K  ncepower
 ncep035n12 ncep035n12d.pdf 

NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.27. Size:402K  ncepower
 ncep033n10m.pdf 

NCEP033N10M, NCEP033N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO

 8.28. Size:402K  ncepower
 ncep033n10d.pdf 

NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 8.29. Size:701K  ncepower
 ncep033n85m.pdf 

NCEP033N85M, NCEP033N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

 8.30. Size:402K  ncepower
 ncep033n10 ncep033n10d.pdf 

NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 8.31. Size:1810K  ncepower
 ncep039n10.pdf 

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V

 8.32. Size:361K  ncepower
 ncep035n72.pdf 

NCEP035N72 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat

 8.33. Size:992K  ncepower
 ncep038n10gu.pdf 

http //www.ncepower.com NCEP038N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP038N10GU uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.45m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produ

 8.34. Size:815K  ncepower
 ncep030n85ll.pdf 

NCEP030N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =210A DS D switching performance. Both conduction and switching power R =2.65m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 8.35. Size:716K  ncepower
 ncep030n30gu.pdf 

http //www.ncepower.com NCEP030N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4m (typical) @ V =4.5V

 8.36. Size:332K  ncepower
 ncep033n85 ncep033n85d.pdf 

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 8.37. Size:338K  ncepower
 ncep039n10 ncep039n10d.pdf 

NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO

 8.38. Size:326K  ncepower
 ncep035n85gu.pdf 

http //www.ncepower.com NCEP035N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel