NCEP033N10 Datasheet. Specs and Replacement

Type Designator: NCEP033N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 887.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO-220

NCEP033N10 substitution

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NCEP033N10 datasheet

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NCEP033N10

NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2... See More ⇒

 ..2. Size:402K  ncepower
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NCEP033N10

NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2... See More ⇒

 0.1. Size:402K  ncepower
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NCEP033N10

NCEP033N10M, NCEP033N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO... See More ⇒

 0.2. Size:402K  ncepower
 ncep033n10d.pdf pdf_icon

NCEP033N10

NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2... See More ⇒

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Detailed specifications: NCEP02T11T, NCEP030N12, NCEP030N12D, NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, AON7410, NCEP033N10D, NCEP033N10M, NCEP033N85M, NCEP035N10M, NCEP035N12, NCEP035N12D, NCEP035N12VD, NCEP035N60AG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.