NCEP033N10 - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP033N10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 245 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 887.3 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP033N10
NCEP033N10 Datasheet (PDF)
ncep033n10.pdf
NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
ncep033n10 ncep033n10d.pdf
NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
ncep033n10m.pdf
NCEP033N10M, NCEP033N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO
ncep033n10d.pdf
NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
Другие MOSFET... NCEP02T11T , NCEP030N12 , NCEP030N12D , NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL , NCEP031N85M , RFP50N06 , NCEP033N10D , NCEP033N10M , NCEP033N85M , NCEP035N10M , NCEP035N12 , NCEP035N12D , NCEP035N12VD , NCEP035N60AG .
History: CEP3120 | SSM6P39TU | IPI120N08S4-03 | MPSA60M240 | RT1E060XN | APM4532
History: CEP3120 | SSM6P39TU | IPI120N08S4-03 | MPSA60M240 | RT1E060XN | APM4532
Список транзисторов
Обновления
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