All MOSFET. NCEP033N10M Datasheet

 

NCEP033N10M Datasheet and Replacement


   Type Designator: NCEP033N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 887.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-220
 

 NCEP033N10M substitution

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NCEP033N10M Datasheet (PDF)

 ..1. Size:402K  ncepower
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NCEP033N10M

NCEP033N10M, NCEP033N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO

 4.1. Size:402K  ncepower
 ncep033n10.pdf pdf_icon

NCEP033N10M

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 4.2. Size:402K  ncepower
 ncep033n10d.pdf pdf_icon

NCEP033N10M

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 4.3. Size:402K  ncepower
 ncep033n10 ncep033n10d.pdf pdf_icon

NCEP033N10M

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

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Datasheet: NCEP030N12D , NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , 4435 , NCEP033N85M , NCEP035N10M , NCEP035N12 , NCEP035N12D , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K .

History: CRTD110N03L | SSP65R090S2

Keywords - NCEP033N10M MOSFET datasheet

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