All MOSFET. NCEP040N10GU Datasheet

 

NCEP040N10GU MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP040N10GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6-8L

 NCEP040N10GU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP040N10GU Datasheet (PDF)

 ..1. Size:985K  ncepower
 ncep040n10gu.pdf

NCEP040N10GU NCEP040N10GU

http://www.ncepower.com NCEP040N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N10GU uses Super Trench II technology that is V =100V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

 4.1. Size:363K  ncepower
 ncep040n10.pdf

NCEP040N10GU NCEP040N10GU

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 4.2. Size:363K  ncepower
 ncep040n10d.pdf

NCEP040N10GU NCEP040N10GU

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 4.3. Size:363K  ncepower
 ncep040n10m.pdf

NCEP040N10GU NCEP040N10GU

NCEP040N10M,NCEP040N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG

 4.4. Size:363K  ncepower
 ncep040n10 ncep040n10d.pdf

NCEP040N10GU NCEP040N10GU

NCEP040N10,NCEP040N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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