NCEP040N10GU datasheet, аналоги, основные параметры

Наименование производителя: NCEP040N10GU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 160 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP040N10GU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP040N10GU даташит

 ..1. Size:985K  ncepower
 ncep040n10gu.pdf pdf_icon

NCEP040N10GU

http //www.ncepower.com NCEP040N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N10GU uses Super Trench II technology that is V =100V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =3.6m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc

 4.1. Size:363K  ncepower
 ncep040n10.pdf pdf_icon

NCEP040N10GU

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 4.2. Size:363K  ncepower
 ncep040n10d.pdf pdf_icon

NCEP040N10GU

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=

 4.3. Size:363K  ncepower
 ncep040n10m.pdf pdf_icon

NCEP040N10GU

NCEP040N10M,NCEP040N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP035N60K, NCEP035N72, NCEP035N72GU, NCEP035N85, NCEP035N85D, NCEP036N10MSL, NCEP038N10GU, NCEP039N10F, 2SK3568, NCEP040N10M, NCEP040N12, NCEP040N12D, NCEP040N85G, NCEP040N85GU, NCEP040N85M, NCEP040N85MD, NCEP040NH150LL