NCEP040N12D PDF and Equivalents Search

 

NCEP040N12D Specs and Replacement


   Type Designator: NCEP040N12D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-263
 

 NCEP040N12D substitution

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NCEP040N12D datasheet

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NCEP040N12D

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

 ..2. Size:400K  ncepower
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NCEP040N12D

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

 4.1. Size:400K  ncepower
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NCEP040N12D

NCEP040N12, NCEP040N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.3m , typical (TO-2... See More ⇒

 5.1. Size:363K  ncepower
ncep040n10.pdf pdf_icon

NCEP040N12D

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

Detailed specifications: NCEP035N85 , NCEP035N85D , NCEP036N10MSL , NCEP038N10GU , NCEP039N10F , NCEP040N10GU , NCEP040N10M , NCEP040N12 , RFP50N06 , NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD , NCEP040NH150LL , NCEP045N10AG , NCEP045N10F , NCEP045N10G .

History: STN4438 | AGM1030MBP | AGM1099S | AGM15N10D | AGM1099E | NCE65N330 | IRF7483MTRPBF

Keywords - NCEP040N12D MOSFET specs

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