NCEP045N10M Datasheet. Specs and Replacement

Type Designator: NCEP045N10M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220

NCEP045N10M substitution

- MOSFET ⓘ Cross-Reference Search

 

NCEP045N10M datasheet

 ..1. Size:371K  ncepower
 ncep045n10m.pdf pdf_icon

NCEP045N10M

NCEP045N10M,NCEP045N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-2... See More ⇒

 4.1. Size:323K  ncepower
 ncep045n10ag.pdf pdf_icon

NCEP045N10M

NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m... See More ⇒

 4.2. Size:371K  ncepower
 ncep045n10 ncep045n10d.pdf pdf_icon

NCEP045N10M

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒

 4.3. Size:371K  ncepower
 ncep045n10d.pdf pdf_icon

NCEP045N10M

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263... See More ⇒

SHOW MORE

Detailed specifications: NCEP040N85G, NCEP040N85GU, NCEP040N85M, NCEP040N85MD, NCEP040NH150LL, NCEP045N10AG, NCEP045N10F, NCEP045N10G, 2N60, NCEP045N85, NCEP045N85G, NCEP045N85GU, NCEP048N72, NCEP048N85, NCEP048N85D, NCEP048N85M, NCEP048N85MD

Keywords - NCEP045N10M MOSFET specs

 NCEP045N10M cross reference

 NCEP045N10M equivalent finder

 NCEP045N10M pdf lookup

 NCEP045N10M substitution

 NCEP045N10M replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility