NCEP045N10M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP045N10M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 125 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 92 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 590 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP045N10M
NCEP045N10M Datasheet (PDF)
ncep045n10m.pdf
NCEP045N10M,NCEP045N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-2
ncep045n10ag.pdf
NCEP045N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m
ncep045n10 ncep045n10d.pdf
NCEP045N10,NCEP045N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263
ncep045n10g.pdf
http://www.ncepower.com NCEP045N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP045N10G uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
ncep045n10f.pdf
NCEP045N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =60A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical@ VGS=10V losses are minimized due to an extremely low combination o
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: HM80N15
