Справочник MOSFET. NCEP045N10M

 

NCEP045N10M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP045N10M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 125 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 590 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP045N10M

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP045N10M Datasheet (PDF)

 ..1. Size:371K  ncepower
 ncep045n10m.pdf pdf_icon

NCEP045N10M

NCEP045N10M,NCEP045N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-2

 4.1. Size:323K  ncepower
 ncep045n10ag.pdf pdf_icon

NCEP045N10M

NCEP045N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m

 4.2. Size:371K  ncepower
 ncep045n10 ncep045n10d.pdf pdf_icon

NCEP045N10M

NCEP045N10,NCEP045N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

 4.3. Size:371K  ncepower
 ncep045n10d.pdf pdf_icon

NCEP045N10M

NCEP045N10,NCEP045N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP040N85G , NCEP040N85GU , NCEP040N85M , NCEP040N85MD , NCEP040NH150LL , NCEP045N10AG , NCEP045N10F , NCEP045N10G , IRF830 , NCEP045N85 , NCEP045N85G , NCEP045N85GU , NCEP048N72 , NCEP048N85 , NCEP048N85D , NCEP048N85M , NCEP048N85MD .

History: SRT08N025HC56TR-G | IPP60R280P7 | NTNS3164NZ | IPN80R2K4P7 | HY1808AM | NTMS5838NLR2G

 

 
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