NCEP048N85M MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP048N85M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 71 nC
trⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 740 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO-220
NCEP048N85M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP048N85M Datasheet (PDF)
ncep048n85m ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85m.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85 ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NCE60P16AQ
History: NCE60P16AQ
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918