NCEP048N85M Datasheet. Specs and Replacement
Type Designator: NCEP048N85M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 740 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO-220
NCEP048N85M substitution
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NCEP048N85M datasheet
ncep048n85m ncep048n85md.pdf
NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒
ncep048n85m.pdf
NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒
ncep048n85md.pdf
NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒
ncep048n85 ncep048n85d.pdf
NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒
Detailed specifications: NCEP045N10G, NCEP045N10M, NCEP045N85, NCEP045N85G, NCEP045N85GU, NCEP048N72, NCEP048N85, NCEP048N85D, IRF1405, NCEP048N85MD, NCEP048NH150, NCEP048NH150D, NCEP048NH150T, NCEP050N10M, NCEP050N10MD, NCEP050N10MG, NCEP050N12
Keywords - NCEP048N85M MOSFET specs
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History: 2SK3930-01S
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