NCEP048N85M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP048N85M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 85 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 71 nC
Время нарастания (tr): 61 ns
Выходная емкость (Cd): 740 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0048 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP048N85M
NCEP048N85M Datasheet (PDF)
ncep048n85m ncep048n85md.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048n85 ncep048n85d.pdf
NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep048nh150d.pdf
http://www.ncepower.com NCEP048NH150DNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =175ADS Duniquely optimized to provide the most efficient high frequencyR =3.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge
ncep048n72.pdf
http://www.ncepower.comNCEP048N72NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP048N72 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
ncep048nh150t.pdf
NCEP048NH150Thttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =223A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =3.9m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Ex
ncep048nh150.pdf
http://www.ncepower.com NCEP048NH150NCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench III technology that is V =150V,I =175ADS Duniquely optimized to provide the most efficient high frequencyR =3.9m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
