All MOSFET. NCEP050N10MG Datasheet

 

NCEP050N10MG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP050N10MG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN5X6-8L

 NCEP050N10MG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP050N10MG Datasheet (PDF)

 ..1. Size:654K  ncepower
ncep050n10mg.pdf

NCEP050N10MG
NCEP050N10MG

NCEP050N10MGNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combina

 3.1. Size:736K  ncepower
ncep050n10m.pdf

NCEP050N10MG
NCEP050N10MG

NCEP050N10MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 3.2. Size:952K  ncepower
ncep050n10md.pdf

NCEP050N10MG
NCEP050N10MG

NCEP050N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

 5.1. Size:1315K  ncepower
ncep050n12d.pdf

NCEP050N10MG
NCEP050N10MG

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 5.2. Size:1315K  ncepower
ncep050n12.pdf

NCEP050N10MG
NCEP050N10MG

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 5.3. Size:323K  ncepower
ncep050n12gu.pdf

NCEP050N10MG
NCEP050N10MG

NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 5.4. Size:1315K  ncepower
ncep050n12 ncep050n12d.pdf

NCEP050N10MG
NCEP050N10MG

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi

 5.5. Size:304K  ncepower
ncep050n12agu.pdf

NCEP050N10MG
NCEP050N10MG

NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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