NCEP050N10MG
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP050N10MG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 145
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 106
nC
trⓘ - Rise Time: 61
nS
Cossⓘ -
Output Capacitance: 540
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
PDFN5X6-8L
NCEP050N10MG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP050N10MG
Datasheet (PDF)
..1. Size:654K ncepower
ncep050n10mg.pdf 
NCEP050N10MGNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combina
3.1. Size:736K ncepower
ncep050n10m.pdf
NCEP050N10MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
3.2. Size:952K ncepower
ncep050n10md.pdf
NCEP050N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =123ADS Dswitching performance. Both conduction and switching power R =4.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
5.1. Size:1315K ncepower
ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
5.2. Size:1315K ncepower
ncep050n12.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
5.3. Size:323K ncepower
ncep050n12gu.pdf
NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
5.4. Size:1315K ncepower
ncep050n12 ncep050n12d.pdf
Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
5.5. Size:304K ncepower
ncep050n12agu.pdf
NCEP050N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.0m , typical @ VGS=4.5V losses are
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