NCEP055N10U Datasheet. Specs and Replacement

Type Designator: NCEP055N10U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO-262

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NCEP055N10U datasheet

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NCEP055N10U

NCEP055N10U NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

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NCEP055N10U

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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NCEP055N10U

http //www.ncepower.com NCEP055N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on... See More ⇒

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NCEP055N10U

NCEP055N10M, NCEP055N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =110A DS D switching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

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Detailed specifications: NCEP050N12GU, NCEP050N85G, NCEP050N85M, NCEP053N85GU, NCEP055N10, NCEP055N10D, NCEP055N10G, NCEP055N10M, IRFZ44N, NCEP055N12, NCEP055N12AG, NCEP055N12D, NCEP055N12G, NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, NCEP058N85M

Keywords - NCEP055N10U MOSFET specs

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