NCEP055N10U datasheet, аналоги, основные параметры

Наименование производителя: NCEP055N10U

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 61 ns

Cossⓘ - Выходная емкость: 410 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm

Тип корпуса: TO-262

Аналог (замена) для NCEP055N10U

- подборⓘ MOSFET транзистора по параметрам

 

NCEP055N10U даташит

 ..1. Size:420K  ncepower
 ncep055n10u.pdf pdf_icon

NCEP055N10U

NCEP055N10U NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin

 4.1. Size:405K  ncepower
 ncep055n10.pdf pdf_icon

NCEP055N10U

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 4.2. Size:337K  ncepower
 ncep055n10g.pdf pdf_icon

NCEP055N10U

http //www.ncepower.com NCEP055N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

 4.3. Size:790K  ncepower
 ncep055n10m.pdf pdf_icon

NCEP055N10U

NCEP055N10M, NCEP055N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =110A DS D switching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP050N12GU, NCEP050N85G, NCEP050N85M, NCEP053N85GU, NCEP055N10, NCEP055N10D, NCEP055N10G, NCEP055N10M, IRFZ44N, NCEP055N12, NCEP055N12AG, NCEP055N12D, NCEP055N12G, NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, NCEP058N85M