NCEP055N12G Datasheet. Specs and Replacement

Type Designator: NCEP055N12G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 145 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: DFN5X6-8L

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NCEP055N12G datasheet

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NCEP055N12G

NCEP055N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combination... See More ⇒

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NCEP055N12G

NCEP055N12AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m... See More ⇒

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NCEP055N12G

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263... See More ⇒

 4.3. Size:358K  ncepower
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NCEP055N12G

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263... See More ⇒

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Detailed specifications: NCEP055N10, NCEP055N10D, NCEP055N10G, NCEP055N10M, NCEP055N10U, NCEP055N12, NCEP055N12AG, NCEP055N12D, 20N60, NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, NCEP058N85M, NCEP060N10, NCEP060N10D, NCEP060N10F, NCEP060N10G

Keywords - NCEP055N12G MOSFET specs

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