NCEP055N12G datasheet, аналоги, основные параметры

Наименование производителя: NCEP055N12G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 145 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 380 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP055N12G

- подборⓘ MOSFET транзистора по параметрам

 

NCEP055N12G даташит

 ..1. Size:286K  ncepower
 ncep055n12g.pdf pdf_icon

NCEP055N12G

NCEP055N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combination

 4.1. Size:311K  ncepower
 ncep055n12ag.pdf pdf_icon

NCEP055N12G

NCEP055N12AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m

 4.2. Size:358K  ncepower
 ncep055n12d.pdf pdf_icon

NCEP055N12G

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 4.3. Size:358K  ncepower
 ncep055n12.pdf pdf_icon

NCEP055N12G

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP055N10, NCEP055N10D, NCEP055N10G, NCEP055N10M, NCEP055N10U, NCEP055N12, NCEP055N12AG, NCEP055N12D, 20N60, NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, NCEP058N85M, NCEP060N10, NCEP060N10D, NCEP060N10F, NCEP060N10G