NCEP058N85M Datasheet. Specs and Replacement

Type Designator: NCEP058N85M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO-220

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NCEP058N85M datasheet

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NCEP058N85M

NCEP058N85M, NCEP058N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =95A DS D switching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

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NCEP058N85M

NCEP058N85, NCEP058N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr... See More ⇒

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NCEP058N85M

NCEP058N85GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio... See More ⇒

 4.3. Size:345K  ncepower
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NCEP058N85M

NCEP058N85, NCEP058N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr... See More ⇒

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Detailed specifications: NCEP055N10U, NCEP055N12, NCEP055N12AG, NCEP055N12D, NCEP055N12G, NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, IRFP460, NCEP060N10, NCEP060N10D, NCEP060N10F, NCEP060N10G, NCEP060N60G, NCEP063N10AGU, NCEP063N10GU, NCEP063N85G

Keywords - NCEP058N85M MOSFET specs

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