All MOSFET. NCEP058N85M Datasheet

 

NCEP058N85M Datasheet and Replacement


   Type Designator: NCEP058N85M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO-220
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NCEP058N85M Datasheet (PDF)

 ..1. Size:625K  ncepower
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NCEP058N85M

NCEP058N85M, NCEP058N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =95ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.1. Size:345K  ncepower
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NCEP058N85M

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.2. Size:328K  ncepower
 ncep058n85gu.pdf pdf_icon

NCEP058N85M

NCEP058N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio

 4.3. Size:345K  ncepower
 ncep058n85d.pdf pdf_icon

NCEP058N85M

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

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History: AP2306CGN-HF | BUZ84 | AON6794 | CED05N8 | PMN22XN | IRFHM792PBF | BL10N70-A

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