NCEP068N10K Datasheet. Specs and Replacement

Type Designator: NCEP068N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 60 nC

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO-252

NCEP068N10K substitution

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NCEP068N10K datasheet

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NCEP068N10K

http //www.ncepower.com NCEP068N10K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)... See More ⇒

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NCEP068N10K

http //www.ncepower.com NCEP068N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo... See More ⇒

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NCEP068N10K

http //www.ncepower.com NCEP068N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo... See More ⇒

 4.3. Size:329K  ncepower
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NCEP068N10K

http //www.ncepower.com NCEP068N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)... See More ⇒

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Detailed specifications: NCEP063N85G, NCEP065N10, NCEP065N10AG, NCEP065N10AGU, NCEP065N10AK, NCEP065N10GU, NCEP065N12AGU, NCEP065N85D, 8205A, NCEP070N10AGU, NCEP070N10GU, NCEP070N12, NCEP070N12D, NCEP072N10A, NCEP075N85AGU, NCEP075N85GU, NCEP078N10AG

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