NCEP068N10K - аналоги, даташиты, параметры транзистора

NCEP068N10K Datasheet (PDF)

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http://www.ncepower.com NCEP068N10KNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

4.1. Size:333K ncepower
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http://www.ncepower.com NCEP068N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo

4.2. Size:366K ncepower
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http://www.ncepower.com NCEP068N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo

4.3. Size:329K ncepower
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http://www.ncepower.com NCEP068N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

Другие MOSFET... NCEP063N85G , NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU , NCEP065N12AGU , NCEP065N85D , IRF630 , NCEP070N10AGU , NCEP070N10GU , NCEP070N12 , NCEP070N12D , NCEP072N10A , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG .