NCEP068N10K - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP068N10K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 335 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEP068N10K
NCEP068N10K Datasheet (PDF)
ncep068n10k.pdf

http://www.ncepower.com NCEP068N10KNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
ncep068n10ag.pdf

http://www.ncepower.com NCEP068N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo
ncep068n10ak.pdf

http://www.ncepower.com NCEP068N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo
ncep068n10g.pdf

http://www.ncepower.com NCEP068N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
Другие MOSFET... NCEP063N85G , NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU , NCEP065N12AGU , NCEP065N85D , 2SK3878 , NCEP070N10AGU , NCEP070N10GU , NCEP070N12 , NCEP070N12D , NCEP072N10A , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG .
History: SFG10R05KF | CJA03N10-HF
History: SFG10R05KF | CJA03N10-HF



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