NCEP090N10AGU PDF and Equivalents Search

 

NCEP090N10AGU Specs and Replacement


   Type Designator: NCEP090N10AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFN5X6-8L
 

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NCEP090N10AGU datasheet

 ..1. Size:333K  ncepower
 ncep090n10agu.pdf pdf_icon

NCEP090N10AGU

NCEP090N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min... See More ⇒

 4.1. Size:334K  ncepower
 ncep090n10gu.pdf pdf_icon

NCEP090N10AGU

NCEP090N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒

 5.1. Size:340K  ncepower
 ncep090n12agu.pdf pdf_icon

NCEP090N10AGU

NCEP090N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are ... See More ⇒

 6.1. Size:782K  ncepower
 ncep090n20t.pdf pdf_icon

NCEP090N10AGU

NCEP090N20T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =200V,I =125A DS D switching performance. Both conduction and switching power R =7.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati... See More ⇒

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Detailed specifications: NCEP080N12G , NCEP080N12I , NCEP080N85 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , IRFB3607 , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , NCEP090N20T , NCEP090N85A , NCEP090N85AGU , NCEP090N85AQU .

Keywords - NCEP090N10AGU MOSFET specs

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