All MOSFET. NCEP090N10GU Datasheet

 

NCEP090N10GU Datasheet and Replacement


   Type Designator: NCEP090N10GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 289 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN5X6-8L
 

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NCEP090N10GU Datasheet (PDF)

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NCEP090N10GU

NCEP090N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:333K  ncepower
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NCEP090N10GU

NCEP090N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min

 5.1. Size:340K  ncepower
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NCEP090N10GU

NCEP090N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are

 6.1. Size:782K  ncepower
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NCEP090N10GU

NCEP090N20TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =200V,I =125ADS Dswitching performance. Both conduction and switching power R =7.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

Datasheet: NCEP080N12I , NCEP080N85 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU , IRLZ44N , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , NCEP090N20T , NCEP090N85A , NCEP090N85AGU , NCEP090N85AQU , NCEP090N85GU .

History: MMF80R900PBTH | FTA04N60A | SL12N10 | SQ1912EH | RUH30120M-C | NCE035N30G | VNT008D

Keywords - NCEP090N10GU MOSFET datasheet

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