All MOSFET. NCEP10N12 Datasheet

 

NCEP10N12 Datasheet and Replacement


   Type Designator: NCEP10N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
 

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NCEP10N12 Datasheet (PDF)

 ..1. Size:417K  ncepower
 ncep10n12 ncep10n12d.pdf pdf_icon

NCEP10N12

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 ..2. Size:417K  ncepower
 ncep10n12.pdf pdf_icon

NCEP10N12

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 0.1. Size:729K  ncepower
 ncep10n12ak.pdf pdf_icon

NCEP10N12

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

 0.2. Size:937K  ncepower
 ncep10n12k.pdf pdf_icon

NCEP10N12

NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

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Datasheet: NCEP090N85AGU , NCEP090N85AQU , NCEP090N85GU , NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A , NCEP095N10AG , STP80NF70 , NCEP10N12AK , NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK .

History: STB25NM60N | NCE20ND07U | SIS472DN | WMP08N65C4 | SFG250N08KF | WMQ15DN04TS | HSBB6115

Keywords - NCEP10N12 MOSFET datasheet

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