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NCEP10N12 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP10N12
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 53 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для NCEP10N12

 

 

NCEP10N12 Datasheet (PDF)

 ..1. Size:417K  ncepower
 ncep10n12 ncep10n12d.pdf

NCEP10N12 NCEP10N12

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 ..2. Size:417K  ncepower
 ncep10n12.pdf

NCEP10N12 NCEP10N12

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 0.1. Size:729K  ncepower
 ncep10n12ak.pdf

NCEP10N12 NCEP10N12

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

 0.2. Size:937K  ncepower
 ncep10n12k.pdf

NCEP10N12 NCEP10N12

NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

 0.3. Size:409K  ncepower
 ncep10n12g.pdf

NCEP10N12 NCEP10N12

NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 0.4. Size:417K  ncepower
 ncep10n12d.pdf

NCEP10N12 NCEP10N12

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

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