NCEP11N10AGU Datasheet and Replacement. Cross Reference Search

NCEP11N10AGU Datasheet (PDF)

..1. Size:333K ncepower
ncep11n10agu.pdf pdf_icon

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

4.1. Size:302K ncepower
ncep11n10as.pdf pdf_icon

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

4.2. Size:717K ncepower
ncep11n10aqu.pdf pdf_icon

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

4.3. Size:363K ncepower
ncep11n10ak.pdf pdf_icon

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

Datasheet: NCEP095N10AG , NCEP10N12 , NCEP10N12AK , NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , CS150N03A8 , NCEP11N10AK , NCEP11N10AQU , NCEP11N10AS , NCEP11N12AGU , NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK .