NCEP11N10AGU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP11N10AGU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP11N10AGU
NCEP11N10AGU Datasheet (PDF)
ncep11n10agu.pdf

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V
ncep11n10as.pdf

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim
ncep11n10aqu.pdf

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON
ncep11n10ak.pdf

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo
Другие MOSFET... NCEP095N10AG , NCEP10N12 , NCEP10N12AK , NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , CS150N03A8 , NCEP11N10AK , NCEP11N10AQU , NCEP11N10AS , NCEP11N12AGU , NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK .
History: NCEP10N12AK | NP55N055SUG | STB20N65M5 | WMK18N70EM | WMN10N60C4 | 2SJ583LS | WMO50P04T1
History: NCEP10N12AK | NP55N055SUG | STB20N65M5 | WMK18N70EM | WMN10N60C4 | 2SJ583LS | WMO50P04T1



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