NCEP12N12 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP12N12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 63 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: TO-220
NCEP12N12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP12N12 Datasheet (PDF)
ncep12n12.pdf
NCEP12N12NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
ncep12n12k.pdf
NCEP12N12KNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination
ncep12n12ak.pdf
NCEP12N12AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini
ncep12n12as.pdf
NCEP12N12ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HFS4N50
History: HFS4N50
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918