Справочник MOSFET. NCEP12N12

 

NCEP12N12 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP12N12
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 63 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP12N12

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP12N12 Datasheet (PDF)

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NCEP12N12

NCEP12N12NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

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NCEP12N12

NCEP12N12KNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination

 0.2. Size:394K  ncepower
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NCEP12N12

NCEP12N12AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini

 0.3. Size:358K  ncepower
ncep12n12as.pdfpdf_icon

NCEP12N12

NCEP12N12ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi

Другие MOSFET... NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK , NCEP1260F , NCEP1278 , NCEP1290AK , NCEP12N10AQ , RU7088R , NCEP12N12AK , NCEP12N12AS , NCEP12N12K , NCEP12T10F , NCEP12T11 , NCEP12T13A , NCEP12T15 , NCEP12T18 .

History: SMF5N60 | WMN10N60C4 | STB20N65M5 | WMO50P04T1 | 2SJ583LS | WMK18N70EM | NP55N055SUG

 

 
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