All MOSFET. NCEP12T13A Datasheet

 

NCEP12T13A Datasheet and Replacement


   Type Designator: NCEP12T13A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO-220
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NCEP12T13A Datasheet (PDF)

 ..1. Size:340K  ncepower
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NCEP12T13A

http://www.ncepower.com NCEP12T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.1. Size:309K  ncepower
ncep12t11.pdf pdf_icon

NCEP12T13A

http://www.ncepower.com NCEP12T11NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.2. Size:339K  ncepower
ncep12t12d.pdf pdf_icon

NCEP12T13A

Pb Free Producthttp://www.ncepower.com NCEP12T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:348K  ncepower
ncep12t15.pdf pdf_icon

NCEP12T13A

http://www.ncepower.com NCEP12T15NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TP0610K-T1 | NCE65N230K | 2N90G-TN3-R | 10N70L-TF1-T | 2N65KL-TND-R | CSD16323Q3 | KHB1D0N70G

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