NCEP12T13A. Аналоги и основные параметры
Наименование производителя: NCEP12T13A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 210 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 135 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 510 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP12T13A
- подборⓘ MOSFET транзистора по параметрам
NCEP12T13A даташит
ncep12t13a.pdf
http //www.ncepower.com NCEP12T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep12t11.pdf
http //www.ncepower.com NCEP12T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep12t12d.pdf
Pb Free Product http //www.ncepower.com NCEP12T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep12t15.pdf
http //www.ncepower.com NCEP12T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Другие MOSFET... NCEP1290AK , NCEP12N10AQ , NCEP12N12 , NCEP12N12AK , NCEP12N12AS , NCEP12N12K , NCEP12T10F , NCEP12T11 , AON7403 , NCEP12T15 , NCEP12T18 , NCEP13N10AS , NCEP1505S , NCEP1520AK , NCEP1520BK , NCEP1520G , NCEP1545A .
History: SMG2343PE | MDF4N60TP | MDF4N65BTH | NTD4910N-1G | SUM110P08-11
History: SMG2343PE | MDF4N60TP | MDF4N65BTH | NTD4910N-1G | SUM110P08-11
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