All MOSFET. NCEP18N10AK Datasheet

 

NCEP18N10AK Datasheet and Replacement


   Type Designator: NCEP18N10AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 147.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252
 

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NCEP18N10AK Datasheet (PDF)

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NCEP18N10AK

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

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 ncep18n10ar.pdf pdf_icon

NCEP18N10AK

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

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NCEP18N10AK

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

 4.3. Size:874K  ncepower
 ncep18n10ag.pdf pdf_icon

NCEP18N10AK

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

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Datasheet: NCEP15P30AK , NCEP15T10V , NCEP15T14LL , NCEP15T14T , NCEP15T18T , NCEP15T26LL , NCEP16N85AK , NCEP18N10AG , IRFB4110 , NCEP18N10AQ , NCEP18N10AR , NCEP2390 , NCEP2390D , NCEP25N10AD , NCEP25N10AG , NCEP25N10AQ , NCEP25ND10AG .

History: BLA6H0912-500 | BLA1011S-200R

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