All MOSFET. NCEP18N10AK Datasheet

 

NCEP18N10AK Datasheet and Replacement


   Type Designator: NCEP18N10AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 147.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252
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NCEP18N10AK Datasheet (PDF)

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NCEP18N10AK

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

 4.1. Size:294K  ncepower
 ncep18n10ar.pdf pdf_icon

NCEP18N10AK

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

 4.2. Size:326K  ncepower
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NCEP18N10AK

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

 4.3. Size:874K  ncepower
 ncep18n10ag.pdf pdf_icon

NCEP18N10AK

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: .8205P | MMBF5457 | 2N3797 | BSC025N03LS | IPD90N06S4-05 | NCEP1505S | 2SK1909

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