NCEP18N10AK datasheet, аналоги, основные параметры

Наименование производителя: NCEP18N10AK

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 72 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 147.4 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCEP18N10AK

- подборⓘ MOSFET транзистора по параметрам

 

NCEP18N10AK даташит

 ..1. Size:735K  ncepower
 ncep18n10ak.pdf pdf_icon

NCEP18N10AK

http //www.ncepower.com NCEP18N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AK uses Super Trench II technology that is V =100V,I =42A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON)

 4.1. Size:294K  ncepower
 ncep18n10ar.pdf pdf_icon

NCEP18N10AK

http //www.ncepower.com NCEP18N10AR NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

 4.2. Size:326K  ncepower
 ncep18n10aq.pdf pdf_icon

NCEP18N10AK

http //www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

 4.3. Size:874K  ncepower
 ncep18n10ag.pdf pdf_icon

NCEP18N10AK

http //www.ncepower.com NCEP18N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AG uses Super Trench II technology that is V =100V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON)

ПОКАЗАТЬ ЕЩЁ

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