All MOSFET. NCEP30T21GU Datasheet

 

NCEP30T21GU Datasheet and Replacement


   Type Designator: NCEP30T21GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 2123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: DFN5X6-8L
 

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NCEP30T21GU Datasheet (PDF)

 ..1. Size:725K  ncepower
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NCEP30T21GU

http://www.ncepower.com NCEP30T21GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T21GU uses Super Trench technology that isV =30V,I =210ADS Duniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5VDS(ON) GSswitching power lo

 6.1. Size:783K  ncepower
 ncep30t22gu.pdf pdf_icon

NCEP30T21GU

http://www.ncepower.com NCEP30T22GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T22GU uses Super Trench technology that isV =30V,I =220ADS Duniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching power lo

 7.1. Size:1031K  ncepower
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NCEP30T21GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP30T17GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 7.2. Size:366K  ncepower
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NCEP30T21GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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Datasheet: NCEP3085EG , NCEP30P90G , NCEP30P90K , NCEP30PT16G , NCEP30T15GU , NCEP30T17G , NCEP30T17GU , NCEP30T19G , 5N60 , NCEP30T22GU , NCEP4045GU , NCEP4060EQ , NCEP4075AGU , NCEP4075GU , NCEP4085EG , NCEP4090AGU , NCEP4090GU .

History: SSF3N80D | CS11N90V | STP9NK65Z

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