Справочник MOSFET. NCEP30T21GU

 

NCEP30T21GU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP30T21GU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 210 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 137 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 2123 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0011 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCEP30T21GU

 

 

NCEP30T21GU Datasheet (PDF)

 ..1. Size:725K  ncepower
 ncep30t21gu.pdf

NCEP30T21GU NCEP30T21GU

http://www.ncepower.com NCEP30T21GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T21GU uses Super Trench technology that isV =30V,I =210ADS Duniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5VDS(ON) GSswitching power lo

 6.1. Size:783K  ncepower
 ncep30t22gu.pdf

NCEP30T21GU NCEP30T21GU

http://www.ncepower.com NCEP30T22GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T22GU uses Super Trench technology that isV =30V,I =220ADS Duniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching power lo

 7.1. Size:1031K  ncepower
 ncep30t17gu.pdf

NCEP30T21GU NCEP30T21GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP30T17GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 7.2. Size:366K  ncepower
 ncep30t17g.pdf

NCEP30T21GU NCEP30T21GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.3. Size:361K  ncepower
 ncep30t19g.pdf

NCEP30T21GU NCEP30T21GU

Pb Free Producthttp://www.ncepower.com NCEP30T19GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.4. Size:366K  ncepower
 ncep30t12g.pdf

NCEP30T21GU NCEP30T21GU

Pb Free Producthttp://www.ncepower.com NCEP30T12GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.5. Size:352K  ncepower
 ncep30t15gu.pdf

NCEP30T21GU NCEP30T21GU

http://www.ncepower.com NCEP30T15GUNCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 7.6. Size:469K  ncepower
 ncep30t13gu.pdf

NCEP30T21GU NCEP30T21GU

http://www.ncepower.com NCEP30T13GUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T13GU uses Super Trench technology that is VDS =30V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=2.7m (typical) @ VGS=4.5V switching power loss

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