NCEP40PT30VD Datasheet. Specs and Replacement
Type Designator: NCEP40PT30VD
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 3900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO-263-7L
NCEP40PT30VD substitution
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NCEP40PT30VD datasheet
ncep40pt30vd.pdf
http //www.ncepower.com NCEP40PT30VD NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300A DS D uniquely optimized to provide the most efficient high R =1.6m , typical@ V =-10V DS(ON) GS frequency switching performance. Both conduction and R =2.2m , typical@ V =-4.5V DS(ON) GS switching p... See More ⇒
ncep40pt15d.pdf
http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep40pt15g.pdf
http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS ... See More ⇒
ncep40pt13gu.pdf
http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON... See More ⇒
Detailed specifications: NCEP40P60Q, NCEP40P65GU, NCEP40P65QU, NCEP40P80G, NCEP40PT12K, NCEP40PT13D, NCEP40PT13GU, NCEP40PT15G, BS170, NCEP40T11, NCEP40T11AG, NCEP40T11AK, NCEP40T11K, NCEP40T12AGU, NCEP40T12GU, NCEP40T13AGU, NCEP40T15AGU
Keywords - NCEP40PT30VD MOSFET specs
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