Справочник MOSFET. NCEP40PT30VD

 

NCEP40PT30VD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP40PT30VD
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 390 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 300 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 208.8 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 3900 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO-263-7L

 Аналог (замена) для NCEP40PT30VD

 

 

NCEP40PT30VD Datasheet (PDF)

 ..1. Size:688K  ncepower
 ncep40pt30vd.pdf

NCEP40PT30VD NCEP40PT30VD

http://www.ncepower.comNCEP40PT30VDNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300ADS Duniquely optimized to provide the most efficient highR =1.6m , typical@ V =-10VDS(ON) GSfrequency switching performance. Both conduction andR =2.2m , typical@ V =-4.5VDS(ON) GSswitching p

 6.1. Size:498K  ncepower
 ncep40pt15d.pdf

NCEP40PT30VD NCEP40PT30VD

http://www.ncepower.com NCEP40PT15DNCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.2. Size:542K  ncepower
 ncep40pt15g.pdf

NCEP40PT30VD NCEP40PT30VD

http://www.ncepower.com NCEP40PT15GNCE P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5VDS(ON) GS

 6.3. Size:657K  ncepower
 ncep40pt13gu.pdf

NCEP40PT30VD NCEP40PT30VD

http://www.ncepower.com NCEP40PT13GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.2m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.8m (typical) @ V =-4.5VDS(ON

 6.4. Size:624K  ncepower
 ncep40pt13d.pdf

NCEP40PT30VD NCEP40PT30VD

http://www.ncepower.com NCEP40PT13DNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.85m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =5.0m (typical) @ V =-4.5VDS(ON)

 6.5. Size:653K  ncepower
 ncep40pt12k.pdf

NCEP40PT30VD NCEP40PT30VD

http://www.ncepower.com NCEP40PT12KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120ADS Duniquely optimized to provide the most efficient high frequencyR =4.55m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.0m (typical) @ V =-4.5VDS(ON)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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