NCEP40PT30VD datasheet, аналоги, основные параметры

Наименование производителя: NCEP40PT30VD

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 390 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 300 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 3900 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm

Тип корпуса: TO-263-7L

Аналог (замена) для NCEP40PT30VD

- подборⓘ MOSFET транзистора по параметрам

 

NCEP40PT30VD даташит

 ..1. Size:688K  ncepower
 ncep40pt30vd.pdf pdf_icon

NCEP40PT30VD

http //www.ncepower.com NCEP40PT30VD NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300A DS D uniquely optimized to provide the most efficient high R =1.6m , typical@ V =-10V DS(ON) GS frequency switching performance. Both conduction and R =2.2m , typical@ V =-4.5V DS(ON) GS switching p

 6.1. Size:498K  ncepower
 ncep40pt15d.pdf pdf_icon

NCEP40PT30VD

http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.2. Size:542K  ncepower
 ncep40pt15g.pdf pdf_icon

NCEP40PT30VD

http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS

 6.3. Size:657K  ncepower
 ncep40pt13gu.pdf pdf_icon

NCEP40PT30VD

http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON

ПОКАЗАТЬ ЕЩЁ

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