All MOSFET. FQD11P06 Datasheet

 

FQD11P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD11P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Maximum Drain-Source On-State Resistance (Rds): 0.185 Ohm

Package: TO252, DPAK

FQD11P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD11P06 Datasheet (PDF)

0.1. fqd11p06tf fqd11p06tm fqd11p06 fqu11p06 fqu11p06tu.pdf Size:851K _fairchild_semi

FQD11P06
FQD11P06

January 2009 QFET® FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especi

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