NCEP50P80A MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCEP50P80A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1352 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: TO-220

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