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NCEP50P80A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP50P80A
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 1352 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0118 Ohm
   Тип корпуса: TO-220

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NCEP50P80A Datasheet (PDF)

 ..1. Size:339K  ncepower
 ncep50p80a.pdf

NCEP50P80A NCEP50P80A

http://www.ncepower.com NCEP50P80ANCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 0.1. Size:344K  ncepower
 ncep50p80ak.pdf

NCEP50P80A NCEP50P80A

http://www.ncepower.com NCEP50P80AKNCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.1. Size:312K  ncepower
 ncep50p80.pdf

NCEP50P80A NCEP50P80A

http://www.ncepower.com NCEP50P80NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

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