FQD12N20 PDF and Equivalents Search

 

FQD12N20 Specs and Replacement

Type Designator: FQD12N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO252 DPAK

FQD12N20 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQD12N20 datasheet

 ..1. Size:801K  fairchild semi
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf pdf_icon

FQD12N20

January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia... See More ⇒

 ..2. Size:905K  cn vbsemi
fqd12n20.pdf pdf_icon

FQD12N20

FQD12N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING... See More ⇒

 0.1. Size:640K  fairchild semi
fqd12n20ltm f085.pdf pdf_icon

FQD12N20

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall... See More ⇒

 0.2. Size:699K  fairchild semi
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf pdf_icon

FQD12N20

January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been ... See More ⇒

Detailed specifications: FCH072N60FF085 , FQB8P10 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 , 4435 , FQP13N50C , FQD12N20L , FQD5N50C , FQD12N20LTMF085 , NDS9952A , FQD12P10TMF085 , FQD13N06 , FQD13N06L .

Keywords - FQD12N20 MOSFET specs

 FQD12N20 cross reference
 FQD12N20 equivalent finder
 FQD12N20 pdf lookup
 FQD12N20 substitution
 FQD12N20 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
↑ Back to Top
.