FQD12N20 datasheet, аналоги, основные параметры
Наименование производителя: FQD12N20 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
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Аналог (замена) для FQD12N20
- подборⓘ MOSFET транзистора по параметрам
FQD12N20 даташит
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf
January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia
fqd12n20.pdf
FQD12N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING
fqd12n20ltm f085.pdf
June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf
January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been
Другие IGBT... FCH072N60FF085, FQB8P10, FQB9N50C, FQD10N20C, FDMC8321LDC, FQD10N20L, FDPF041N06BL1, FQD11P06, 4435, FQP13N50C, FQD12N20L, FQD5N50C, FQD12N20LTMF085, NDS9952A, FQD12P10TMF085, FQD13N06, FQD13N06L
Параметры MOSFET. Взаимосвязь и компромиссы
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