FQD12N20 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQD12N20
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 18 nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO252 DPAK
FQD12N20 Datasheet (PDF)
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf

January 2009QFETFQD12N20 / FQU12N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia
fqd12n20.pdf

FQD12N20www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING
fqd12n20ltm f085.pdf

June 2010FQD12N20LTM_F085 200V Logic Level N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf

January 2009QFETFQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been
Другие MOSFET... FCH072N60FF085 , FQB8P10 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 , 2SK3568 , FQP13N50C , FQD12N20L , FQD5N50C , FQD12N20LTMF085 , NDS9952A , FQD12P10TMF085 , FQD13N06 , FQD13N06L .



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