FQD12N20 datasheet, аналоги, основные параметры

Наименование производителя: FQD12N20  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 55 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FQD12N20

- подборⓘ MOSFET транзистора по параметрам

 

FQD12N20 даташит

 ..1. Size:801K  fairchild semi
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdfpdf_icon

FQD12N20

January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia

 ..2. Size:905K  cn vbsemi
fqd12n20.pdfpdf_icon

FQD12N20

FQD12N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

 0.1. Size:640K  fairchild semi
fqd12n20ltm f085.pdfpdf_icon

FQD12N20

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall

 0.2. Size:699K  fairchild semi
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdfpdf_icon

FQD12N20

January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been

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