All MOSFET. NCEP6055GU Datasheet

 

NCEP6055GU Datasheet and Replacement


   Type Designator: NCEP6055GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN5X6-8L
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NCEP6055GU Datasheet (PDF)

 ..1. Size:648K  ncepower
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NCEP6055GU

http://www.ncepower.com NCEP6055GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6055GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =55ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

 6.1. Size:1005K  ncepower
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NCEP6055GU

http://www.ncepower.com NCEP6055AGUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP6055AGU uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.7m (typical) @ V =4.5VDS(ON) GSl

 7.1. Size:556K  ncepower
ncep6050qu.pdf pdf_icon

NCEP6055GU

http://www.ncepower.com NCEP6050QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050QU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

 7.2. Size:630K  ncepower
ncep6050aqu.pdf pdf_icon

NCEP6055GU

http://www.ncepower.com NCEP6050AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: P2003EV | STD4NK60Z | KNB2710A | STD50N03L-1 | IPF075N03L | WNM12N65 | 2SK1412LS

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