NCEP6055GU. Аналоги и основные параметры
Наименование производителя: NCEP6055GU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 320 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP6055GU
- подборⓘ MOSFET транзистора по параметрам
NCEP6055GU даташит
ncep6055gu.pdf
http //www.ncepower.com NCEP6055GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6055GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =55A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6055agu.pdf
http //www.ncepower.com NCEP6055AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6055AGU uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS(ON) GS l
ncep6050qu.pdf
http //www.ncepower.com NCEP6050QU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6050aqu.pdf
http //www.ncepower.com NCEP6050AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low
Другие IGBT... NCEP6015AS, NCEP6016AS, NCEP6035AG, NCEP6035AQU, NCEP6040AGU, NCEP6050AQU, NCEP6050QU, NCEP6055AGU, AO4407A, NCEP6060AGU, NCEP6060GU, NCEP6080G, NCEP6090AGU, NCEP6090AK, NCEP6090D, NCEP6090GU, NCEP60T12AD
History: DH850N10B
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