All MOSFET. NCES120R036T4 Datasheet

 

NCES120R036T4 Datasheet and Replacement


   Type Designator: NCES120R036T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-247-4L
 

 NCES120R036T4 substitution

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NCES120R036T4 Datasheet (PDF)

 ..1. Size:854K  ncepower
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NCES120R036T4

PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.1. Size:832K  ncepower
nces120r062t4.pdf pdf_icon

NCES120R036T4

PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.2. Size:871K  ncepower
nces120r018t4.pdf pdf_icon

NCES120R036T4

PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.1. Size:800K  ncepower
nces120p035t4.pdf pdf_icon

NCES120R036T4

PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

Datasheet: NCEP85T25 , NCEP85T25VD , NCEP85T30LL , NCEP85T30T , NCEP8814AS , NCEP8818AS , NCEPB302G , NCEPB303GU , IRFP250N , NCES120R062T4 , QM0930M3 , MRF134 , MRF136 , MRF136Y , MRF137 , MRF138 , MRF140 .

History: AP4024GEMT | FDFS6N754 | HM24N50A | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

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