NCES120R036T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCES120R036T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ Maximum Gate-Source Voltage: 21 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.8 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 92 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 74 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: TO-247-4L
NCES120R036T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCES120R036T4 Datasheet (PDF)
nces120r036t4.pdf
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