Справочник MOSFET. NCES120R036T4

 

NCES120R036T4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCES120R036T4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 235 W
   Предельно допустимое напряжение сток-исток |Uds|: 1200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 21 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 74 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
   Тип корпуса: TO-247-4L

 Аналог (замена) для NCES120R036T4

 

 

NCES120R036T4 Datasheet (PDF)

 ..1. Size:854K  ncepower
nces120r036t4.pdf

NCES120R036T4
NCES120R036T4

PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.1. Size:832K  ncepower
nces120r062t4.pdf

NCES120R036T4
NCES120R036T4

PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.2. Size:871K  ncepower
nces120r018t4.pdf

NCES120R036T4
NCES120R036T4

PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.1. Size:800K  ncepower
nces120p035t4.pdf

NCES120R036T4
NCES120R036T4

PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.2. Size:821K  ncepower
nces120p075t4.pdf

NCES120R036T4
NCES120R036T4

PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top