MRF151 MOSFET. Datasheet pdf. Equivalent
Type Designator: MRF151
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: CASE211-11
MRF151 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MRF151 Datasheet (PDF)
mrf151.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf151.pdf
MRF151 Part Status: Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V: Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V: Output Power 150 W Gain 13
mrf151grev8d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf151gr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf151re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf151g.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf151rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DMN66D0LT
History: DMN66D0LT
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918