MRF151. Аналоги и основные параметры
Наименование производителя: MRF151
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 125 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 200 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 225 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: CASE211-11
Аналог (замена) для MRF151
- подборⓘ MOSFET транзистора по параметрам
MRF151 даташит
mrf151.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
mrf151.pdf
MRF151 Part Status Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V Output Power 150 W Gain 13
mrf151grev8d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
mrf151gr.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
Другие IGBT... MRF138, MRF140, MRF141, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1, AO3401, MRF151G, MRF154, MRF156, MRF156R, MRF157, MRF158, MRF160, MRF164W
History: BFC17 | SM4912TSK | MRF158
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061







