MRF5015 Specs and Replacement

Type Designator: MRF5015

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 74 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8333 Ohm

Package: CASE319-07

MRF5015 substitution

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MRF5015 datasheet

 ..1. Size:138K  motorola
mrf5015.pdf pdf_icon

MRF5015

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒

 0.1. Size:154K  motorola
mrf5015rev6d.pdf pdf_icon

MRF5015

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒

 0.2. Size:138K  motorola
mrf5015r.pdf pdf_icon

MRF5015

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒

 9.1. Size:161K  motorola
mrf5007 mrf5007r1.pdf pdf_icon

MRF5015

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒

Detailed specifications: MRF177, MRF177M, MRF184, MRF184S, MRF275G, MRF5003, MRF5007, MRF5007R1, SI2302, MRF5035, 2N7002K1, BR10N60, BR20N50, BR2N7002AK2, BR2N7002LK2, BR40N20, BR4N70

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