MRF5015 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5