BR10N60 Specs and Replacement

Type Designator: BR10N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO-220

BR10N60 substitution

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BR10N60 datasheet

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BR10N60

BR10N60 Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency... See More ⇒

Detailed specifications: MRF184S, MRF275G, MRF5003, MRF5007, MRF5007R1, MRF5015, MRF5035, 2N7002K1, 20N50, BR20N50, BR2N7002AK2, BR2N7002LK2, BR40N20, BR4N70, BR50N03, BR6N70, BR7N65

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