BR10N60 Datasheet and Replacement
Type Designator: BR10N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-220
BR10N60 substitution
BR10N60 Datasheet (PDF)
br10n60.pdf

BR10N60 Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
Datasheet: MRF184S , MRF275G , MRF5003 , MRF5007 , MRF5007R1 , MRF5015 , MRF5035 , 2N7002K1 , 2N60 , BR20N50 , BR2N7002AK2 , BR2N7002LK2 , BR40N20 , BR4N70 , BR50N03 , BR6N70 , BR7N65 .
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